c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wt-017-rev.a0 apr.2013 WFP13N50C product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics features ? 13a,500v, r ds(on) (max0.49 ? )@v gs =10v ? ultra-low gate charge(typical 37nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s trench layout-based process.this technology improves the performances compared with standard parts from various sources. all of these power mosfets are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 13 a continuous drain current(@tc=100 ) 8 a i dm drain current pulsed (note1) 52 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 845 mj i ar avalanche current note 1 13 a e ar repetitive avalanche energy (note1) 5 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 190 w derating factor above 25 1.56 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.66 /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w g d s
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 2 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 1 a v ds =400v,tc=125 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.6 - v/ gate threshold voltage v gs(th) v ds =10v,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d = 6 . 5 a - 0.37 0.49 ? forward transconductance gfs v ds = 4 0v,i d = 6.5 a - 15 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 1560 2090 pf reverse transfer capacitance c rss - 25 30 output capacitance c oss - 210 260 switching time turn-on rise time tr v dd = 250 v, i d = 13 a r g = 25 ? (note4,5) - 160 270 ns turn-on delay time td(on) - 90 180 turn-off fall time tf - 60 140 turn-off delay time td(off) - 150 260 total gate charge(gate-source plus gate-drain) qg v dd =4 00 v, v gs =10v, i d = 13 a (note 4 ,5) - 37 50 nc gate-source charge qgs - 10.9 - gate-drain("miller") charge qgd - 17.2 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 13 a pulse drain reverse current i drp - - - 52 a forward voltage(diode) v dsf i dr = 13 a,v gs =0v - - 1.5 v reverse recovery time trr i dr = 13 a,v gs =0v, di dr / dt =100 a / s - 410 - ns reverse recovery charge qrr - 4.5 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 9.0m h i as = 13 a,v dd =50v,r g =0 ? ,starting t j =25 3.i sd 13 a,di/dt 2 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 3 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.1 on region characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation vs. source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics v g s 1 5 .0 v 1 0 .0 v 9 . 0 v 8 . 0 v 7 . 0 v 6 . 5 v 5 . 5 v to p : buttom: 1 0 0 1 0 1 1 0 0 1 0 1 note: 1.250us pulse test 2.tc=25 c v drain-source voltage[v] d s i d r a i n c u r r e n t [ a ] d note: 1.250us pulse test 2.v =40v d s 150 c 2 5 c 2 4 6 8 1 0 0 . 1 1 1 0 v gate-source voltage[v] g s i d r a i n c u r r e n t [ a ] d note: 1.250us pulse test 2.v =40v d s v =10v g s v =20v g s 0 5 1 0 1 5 2 0 0 . 2 0 . 4 0 . 6 i drain current[a] d r d r a i n - s o u r c e o n r e s i s t a n c e [ ] d s ( o n ) 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 1 . 3 1 . 4 0 . 1 1 1 0 150 c 2 5 c v source-drain voltage[v] s d i r e v e r s e d r a i n c u r r e n t [ a ] d r ciss=cgs+cgd(cds=shorted) cos s =cds +cgd crs s =cgd c i s s c o s s c r s s note: 1.v =0v 2.f=1m hz g s 1 0 - 1 1 0 0 1 0 1 3 0 0 0 2 5 0 0 2 0 0 0 1 5 0 0 1 0 0 0 5 0 0 0 v drain-source voltae[v] d s c a p a c i t a n c e [ p f ] v =100v d s v =250v d s v =400v d s 0 1 0 2 0 3 0 4 0 0 2 4 6 8 1 0 1 2 qg toltal gate charge[nc] v s o u r c e v o l t a g e [ v ] g s g a t e
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 4 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.7 breakdown voltage variation vs. temperature fig.8 on-resistance variation vs. temperature fig. 11 transient thermal response curve - 7 5 - 5 0 - 2 5 0 2 5 5 0 1 0 0 1 2 5 1 5 0 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 tj[ c ] b v ( n o r m a l i z e d ) d s 7 5 notes: 1.v =10v 2.i =6.5a g s d - 7 5 - 5 0 - 2 5 0 2 5 5 0 1 0 0 1 2 5 1 5 0 7 5 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 tj[ c ] r ( n o r m a l i z e d ) d s ( o n ) operation in this area is limited by r ds(on) notes: 1 . t c = 25 c 2 .t =150 c single pulse j 1 0 u s 1 0 0 u s 1 m s 1 0 m s 1 0 0 m s d c 1 0 0 1 0 1 1 0 2 1 0 3 v drain-source voltage[v] d s i d r a i n c u r r e n t [ a ] d 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 4 6 8 1 0 1 2 1 4 tc case temperature[ c ] i d r a i n c u r r e n t [ a ] d 1.z (t)=2.5 c/w max. 2.duty factor,d=t1/t2 3.t -t =p * j c jm c dm z (t) j c * n o te single pulse d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 0 . 0 1 p d m t 1 t 2 1 e - 5 1 e-4 1 e-3 0.01 0 . 1 1 1 0 0.01 0 . 1 1 t ,square wave pulse duration [sec] 1 z ( t ) , t h e r m a l r e s p o n s e j c fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 5 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.1 2 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform 1 2 v 2 0 0 n f 3 m a 3 0 0 n f 5 0 k v g s d u t v g s v d s 1 0 v c h a rg e same type a s d u t q g s q g d q g 1 0 v r g v g s v d s r l v d s v g s d u t 9 0 % 1 0 % t d (o n ) t r t d (o ff) t o n t o f f t f v d d 1 0 v r g l i d v d d e a s = b v d s s b v d s s - v d d 1 2 l i a s 2 d u t b v d s s i a s i t d ( ) t i m e v d s ( ) t t p t p v d s v d d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 6 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.1 5 peak diode recovery dv/dt test circuit & waveform v d s d u t i s d l driver s am e type a s d u t r g v g s v d d dv/dt controlled by r g i conteolled by pulse period s d v g s (driver) d = gate pulse width gate pulse period 1 0 v i s d i ,body diode forward current f m (dut) v d s i s d (dut) i r m di/dt body diode reverse current body diode recovery dv/dt v d d body diode forward voltage drop v s d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 7 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics to-220 c package dimension e q 7 a q 1 p e c l l 2 d 2 d b e b f m i n m a x a 4 . 3 0 4 . 7 0 b 1 . 1 0 1 . 4 0 b 0 . 7 0 0 . 9 5 c 0 . 4 0 0 . 6 5 d 1 5 . 2 1 6 . 2 d 2 9 . 0 0 9 . 4 0 e 9 . 7 0 1 0 .1 0 e 2 . 3 9 2 . 6 9 f 1 . 2 5 1 . 4 0 l 1 2 .6 0 1 3 .6 0 l 2 2 . 8 0 3 . 2 0 q 2 . 6 0 3 . 0 0 q 1 2 . 2 0 2 . 6 0 p 3 . 5 0 3 . 8 0 u n it:m m
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 8 / 8 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet WFP13N50C product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : +86-755-8250 6288 fax : +86-755-8250 6299 web site : www.winsemi.com
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